SOI and SiSi
IceMOS Technology is a leading supplier of 100-200mm thick-film SOI and SiSi wafers for a large range of IC and MEMS applications. With over 20 years experience in SOI manufacturing, we offer an impressive specification range, which is amongst the widest available in the market.
Advanced Engineering Substrate for MEMS
IceMOS Technology presents its dielectric isolation technology – delivering high voltage isolation between components on the same chip. Isolation is achieved using thick film SOI technology combined with state of the art high aspect ratio deep trench etching and oxide/poly refill. This technology is available on all wafer sizes from 100mm to 150mm and silicon device layers from 1.5um to 100um.
Superjunction MOSFET
IceMOS MEMS MOSFET is the high voltage MOSFET of "Superjunction Technology". By the combination of Silicon MOSFET technology and MEMS process technology, IceMOS provides world-best-in-class performance. Well-known MEMS technology has been developed by unique manufacturing processes in contrast to MOSFET technology which continues progress mainly for smaller dimension. The combination of both technologies encourages advances in extreme performance of MOSFET.
